Irfi640g datasheet

Irfi640g datasheet

* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) te rminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. DESCRIPTION Third generation power MOSFETs from Vishay provide the

IRFI640G, SiHFI640G Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. Order today, ships today. IRFI640G – N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-220-3 from Vishay Siliconix. Pricing and Availability on millions of electronic components from Digi-Key Electronics. IRFI640G Datasheet, IRFI640G PDF, IRFI640G Data sheet, IRFI640G manual, IRFI640G pdf, IRFI640G, datenblatt, Electronics IRFI640G, alldatasheet, free, datasheet ...

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IRFI640G Datasheet (HTML) - International Rectifier: IRFI640G Datasheet (PDF) Download Datasheet: Related Electronics Part Number: Part Number: Components Description: IRFI640G Datasheet, IRFI640G PDF, IRFI640G Data sheet, IRFI640G manual, IRFI640G pdf, IRFI640G, datenblatt, Electronics IRFI640G, alldatasheet, free, datasheet ... This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HERE IN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com ...

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IRFI640G, SiHFI640G Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.

©2001 fairchild semiconductor corporation irf640, rf1s640, rf1s640sm rev. b figure 4. forward bias safe operating area figure 5. output characteristics figure 6. saturation characteristics figure 7. transfer characteristics figure 8. drain to source on resistance vs gate voltage and drain current figure 9. normalized drain to source on Moved Permanently. The document has moved here. Submit Request for Quote. Unfortunately we do not know of any distributors for International Rectifier IRF1640.Please let us know if you have a known distributor so we can add it to our database, or request a quote from one of our partners. IRF9640 TO-220AB IRF9640 RF1S9640SM TO-263AB RF1S9640 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S9640SM9A. G D S GATE DRAIN (FLANGE) SOURCE DRAIN DRAIN (FLANGE) GATE SOURCE Data Sheet January 2002

Features, Applications: Die in Wafer Form IGBT with on-chip Gate-Emitter and Gate-Collector clamps. FeaturesMost Rugged in IndustryLogic-Level Gate Drive> 6KV ESD Gate ProtectionLow Saturation VoltageHigh Self-clamped Inductive Switching EnergyQualified for the Automotive Qualified [Q101]. Order today, ships today. IRFI640G – N-Channel 200V 9.8A (Tc) 40W (Tc) Through Hole TO-220-3 from Vishay Siliconix. Pricing and Availability on millions of electronic components from Digi-Key Electronics. Power MOSFET IRFI640G, SiHFI640G Vishay Siliconix FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Dynamic dV/dt Rating Low Thermal Resistance Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFET s from Vishay provide the IRFI640G Transistor Datasheet, IRFI640G Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog Power MOSFET IRFI640G, SiHFI640G Vishay Siliconix FEATURES Isolated Package High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) Sink to Lead Creepage Distance = 4.8 mm Dynamic dV/dt Rating Low Thermal Resistance Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFET s from Vishay provide the